ELECTRICAL PROPERTIES OF ANNEALED AND UNANNEALED AL-GE THIN FILM COUPLES

Authors

  • S S Oluyamo Department of Physics, The Federal University of Technology, PMB 704, Akure, Nigeria

Keywords:

Electrical properties, Al-Ge, Thin films, Conductance, Annealing, Barrier height, Saturation current density.

Abstract

The electrical properties of annealed and unannealed Al-Ge thin films had been investigated at electric field values 0.1

- 0.85V/m. Measurements of current - voltage characteristics were obtained at a room temperature. The results of the study showed linear J - V relationship over the voltage range. Annealing changes the electrical properties of the films. As the conductance and barrier heights of annealed samples increase, the saturation current density reduces. Hence a more conducting junction may be obtained from the same metal-semiconductor contact by annealing the sample to a reasonable temperature without loss of surface parameter. In addition, the thickness of the sample also affected the electrical properties of the films.

Downloads

Published

2004-06-28

How to Cite

Oluyamo, S. S. (2004). ELECTRICAL PROPERTIES OF ANNEALED AND UNANNEALED AL-GE THIN FILM COUPLES. Biological Sciences - PJSIR, 47(3), 180–182. Retrieved from https://v2.pjsir.org/index.php/biological-sciences/article/view/1513

Issue

Vol. 47 No. 3 (2004): Pakistan Journal of Scientific and Industrial Research

Section

Articles