ELECTRICAL PROPERTIES OF THERMALLY EVAPORATED INDIUM TELLURIDE THIN FILMS

Abstract

Indium telluride thin films are prepared by thermal evaporation technique onto glass substrate held at room temperature at deposition pressure 2xl 0-4 Pa. Electrical studies of the films annealed in air at 400 K shows semiconducting behaviour. Thickness dependent  electrical  conductivity , activation  energy, aging  effect are also being  investigated. Activation  energyis found to decrease with film thickness. Thickness  dependent  conductivity  is  found  to  follow  Fuchs-Sondheimer  size effect theory. The Hall and thermoelectric measurements show that the films are p-type semiconductor having high carrier concentration  ofthe  order 1018/cm3.